FDFS6N303 |
RFQ for FDFS6N303 Required Field |
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| Technical/Catalog Information | FDFS6N303 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 15V |
| Power - Max | 900mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFS6N303 FDFS6N303 FDFS6N303DKR ND FDFS6N303DKRND FDFS6N303DKR |
| Product | Manufacturers | Pack | D/C |
| FDFS6N303 | - | - | 95+ |
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.
Features |
| ·6 A, 30 V. RDS(ON) = 0.035 W @ VGS = 10 V. RDS(ON) = 0.050 W @ VGS = 4.5 V.·VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A.·Schottky and MOSFET incorporated into single power surface mount SO-8 package.·General purpose pinout for design flexibility.·Ideal for DC/DC converter applications. |
|
Symbol |
Parameter |
FDFS6N303 |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 6 30 2 1.6 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current - Continuous - Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Dual Operation Power Dissipation for Single Operation |
(Note 1a) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
|
VRRM |
Repetitive Peak Reverse Voltage Average Forward Current |
(Note 1a) |
30 2 |
V A |
